N-Channel MOSFET, 8 A, 800 V, 3-Pin D2PAK Vishay SIHB11N80AE-GE3
Product Information
Maximum Drain Source Voltage:
800 V
Maximum Continuous Drain Current:
8 A
Mounting Type:
Surface Mount
Series:
E
Channel Type:
N
Maximum Gate Threshold Voltage:
2 → 4V
Maximum Drain Source Resistance:
0.391 Ω
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Pin Count:
3
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FAQs
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You can order Vishay brand products with SIHB11N80AE-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel MOSFET, 8 A, 800 V, 3-Pin D2PAK Vishay SIHB11N80AE-GE3. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 8 A, 800 V, 3-Pin D2PAK Vishay SIHB11N80AE-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21591985 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21591985.
Yes. We ship SIHB11N80AE-GE3 Internationally to many countries around the world.
This is N-Channel MOSFET 8 A 800 V 3-Pin D2PAK manufactured by Vishay. The manufacturer part number is SIHB11N80AE-GE3. It has a maximum of 800 v drain source voltage. While 8 a of maximum continuous drain current. The product is available in surface mount configuration. The product e, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2 → 4v of maximum gate threshold voltage. It provides up to 0.391 ω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. It contains 3 pins.
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