Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 Toshiba TK090N65Z,S1F(S
Product Information
Maximum Drain Source Voltage:
650 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
TK090N65Z
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.09 Ω
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
30 A
Transistor Material:
Silicon
Pin Count:
3
Checking for live stock
FAQs
Yes. You can also search TK090N65Z,S1F(S on website for other similar products.
We accept all major payment methods for all products including ET21580948. Please check your shopping cart at the time of order.
You can order Toshiba brand products with TK090N65Z,S1F(S directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 Toshiba TK090N65Z,S1F(S. You can also check on our website or by contacting our customer support team for further order details on Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 Toshiba TK090N65Z,S1F(S.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21580948 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21580948.
Yes. We ship TK090N65Z,S1F(S Internationally to many countries around the world.
This is Silicon N-Channel MOSFET 30 A 650 V 3-Pin TO-247 manufactured by Toshiba. The manufacturer part number is TK090N65Z,S1F(S. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product tk090n65z, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.09 ω maximum drain source resistance. The package is a sort of to-247. It consists of 1 elements per chip. While 30 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 3 pins.
Reviews
Don’t hesitate to ask questions for better clarification.