Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220SIS Toshiba TK090A65Z,S4X(S
Product Information
Maximum Drain Source Voltage:
650 V
Maximum Continuous Drain Current:
30 A
Channel Mode:
Enhancement
Series:
TK090A65Z
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.09 Ω
Package Type:
TO-220SIS
Number of Elements per Chip:
1
Transistor Material:
Silicon
Pin Count:
3
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship TK090A65Z,S4X(S Internationally to many countries around the world.
This is Silicon N-Channel MOSFET 30 A 650 V 3-Pin TO-220SIS manufactured by Toshiba. The manufacturer part number is TK090A65Z,S4X(S. It has a maximum of 650 v drain source voltage. While 30 a of maximum continuous drain current. The product carries enhancement channel mode. The product tk090a65z, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.09 ω maximum drain source resistance. The package is a sort of to-220sis. It consists of 1 elements per chip. The transistor is manufactured from highly durable silicon material. It contains 3 pins.
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