N-Channel MOSFET, 330 A, 40 V, 8-Pin LFPAK ON Semiconductor NTMJS0D9N04CLTWG
Product Information
Maximum Continuous Drain Current:
330 A
Width:
4.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2V
Package Type:
LFPAK8
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
143 nC @ 10 V
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
167 W
Maximum Gate Source Voltage:
±20 V
Height:
1.2mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
1.2 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2V @ 190µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
SOT-1205, 8-LFPAK56
Rds On (Max) @ Id, Vgs:
0.82mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs:
143 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.8W (Ta), 167W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
8862 pF @ 25 V
standardLeadTime:
19 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-LFPAK
Current - Continuous Drain (Id) @ 25°C:
50A (Ta), 330A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMJS0
ECCN:
EAR99
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This is N-Channel MOSFET 330 A 40 V 8-Pin LFPAK ON Semiconductor manufactured by onsemi. The manufacturer part number is NTMJS0D9N04CLTWG. While 330 a of maximum continuous drain current. Furthermore, the product is 4.9mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of lfpak8. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 143 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 167 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.2mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 1.2 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2v @ 190µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in sot-1205, 8-lfpak56. It has a maximum Rds On and voltage of 0.82mohm @ 50a, 10v. The maximum gate charge and given voltages include 143 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3.8w (ta), 167w (tc). The product's input capacitance at maximum includes 8862 pf @ 25 v. It has a long 19 weeks standard lead time. 8-lfpak is the supplier device package value. The continuous current drain at 25°C is 50a (ta), 330a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntmjs0, a base product number of the product. The product is designated with the ear99 code number.
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