Maximum Continuous Drain Current:
1.3 A
Width:
1.4mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.25V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.7V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3.1 nC @ 4.5 V
Channel Type:
P
Length:
3.04mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
400 mW
Maximum Gate Source Voltage:
+12 V
Height:
1.01mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
Maximum Drain Source Resistance:
350 mΩ
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.25V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
220mOhm @ 750mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
5.5 nC @ 4 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
NTR1P02LT1G Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
edacadModelUrl:
/en/models/1749076
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
400mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
225 pF @ 5 V
standardLeadTime:
38 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C:
1.3A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTR1P02
ECCN:
EAR99
This is manufactured by onsemi. The manufacturer part number is NTR1P02LT1G. While 1.3 a of maximum continuous drain current. Furthermore, the product is 1.4mm wide. The product complies with automotive standard - aec-q101. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 1.25v of maximum gate threshold voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.7v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 3.1 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 3.04mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 400 mw maximum power dissipation. It features a maximum gate source voltage of +12 v. In addition, the height is 1.01mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1v . It provides up to 350 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.25v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. It has a maximum Rds On and voltage of 220mohm @ 750ma, 4.5v. The maximum gate charge and given voltages include 5.5 nc @ 4 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. It is shipped in tape & reel (tr) package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±12v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 400mw (ta). The product's input capacitance at maximum includes 225 pf @ 5 v. It has a long 38 weeks standard lead time. sot-23-3 (to-236) is the supplier device package value. The continuous current drain at 25°C is 1.3a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntr1p02, a base product number of the product. The product is designated with the ear99 code number.
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