Automotive Standard:
AEC-Q101
Maximum Power Dissipation Pd:
115W
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
80V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
38nC
Series:
NVMFS6H824N
Maximum Gate Source Voltage Vgs:
20 V
Height:
1.05mm
Width:
6.1 mm
Length:
5.1mm
Package Type:
DFN
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
4.5mΩ
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
103A
Channel Type:
Type N
Maximum Operating Temperature:
175°C
Pin Count:
5
Mount Type:
Surface
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Rds On (Max) @ Id, Vgs:
4.5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs:
38 nC @ 10 V
Vgs(th) (Max) @ Id:
4V @ 140µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.8W (Ta), 115W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2470 pF @ 40 V
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Current - Continuous Drain (Id) @ 25°C:
19A (Ta), 103A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NVMFS6
ECCN:
EAR99
