Maximum Continuous Drain Current:
2.4 A
Width:
1.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.4V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
4.76 nC @ 4.5 V
Channel Type:
N
Length:
3.04mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
480 mW
Maximum Gate Source Voltage:
±12 V
Height:
1.01mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
Maximum Drain Source Resistance:
110 mΩ
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
55mOhm @ 3.2A, 10V
Gate Charge (Qg) (Max) @ Vgs:
4.76 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
NTR4170NT1G Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
edacadModelUrl:
/en/models/2050557
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
480mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
432 pF @ 15 V
standardLeadTime:
32 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C:
2.4A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTR4170
ECCN:
EAR99
