onsemi NTR3C21NZT1G
Product Information
Maximum Continuous Drain Current:
3.6 A
Width:
1.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.45V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
17.8 nC @ 4.5 V
Channel Type:
N
Length:
3.04mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
470 mW
Maximum Gate Source Voltage:
±8 V
Height:
1.01mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
Maximum Drain Source Resistance:
55 mΩ
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
24mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
17.8 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
NTR3C21NZT1G Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
edacadModelUrl:
/en/models/5845562
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
470mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
1540 pF @ 16 V
standardLeadTime:
20 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C:
3.6A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTR3C21
ECCN:
EAR99
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Yes. We ship NTR3C21NZT1G Internationally to many countries around the world.
This is manufactured by onsemi. The manufacturer part number is NTR3C21NZT1G. While 3.6 a of maximum continuous drain current. Furthermore, the product is 1.4mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 1v of maximum gate threshold voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.45v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 17.8 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 3.04mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 470 mw maximum power dissipation. It features a maximum gate source voltage of ±8 v. In addition, the height is 1.01mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1v . It provides up to 55 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. It has a maximum Rds On and voltage of 24mohm @ 5a, 4.5v. The maximum gate charge and given voltages include 17.8 nc @ 4.5 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. It is shipped in tape & reel (tr) package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 470mw (ta). The product's input capacitance at maximum includes 1540 pf @ 16 v. It has a long 20 weeks standard lead time. sot-23-3 (to-236) is the supplier device package value. The continuous current drain at 25°C is 3.6a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntr3c21, a base product number of the product. The product is designated with the ear99 code number.
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