Automotive Standard:
AEC-Q101
Maximum Power Dissipation Pd:
128W
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
40V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
65nC
Series:
NVMJS1D3N04C
Maximum Gate Source Voltage Vgs:
20 V
Height:
1.2mm
Width:
4.9 mm
Length:
5mm
Package Type:
LFPAK
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
1.3mΩ
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
235A
Channel Type:
Type N
Maximum Operating Temperature:
175°C
Pin Count:
8
Mount Type:
Surface
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
SOT-1205, 8-LFPAK56
Rds On (Max) @ Id, Vgs:
1.3mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs:
65 nC @ 10 V
Vgs(th) (Max) @ Id:
3.5V @ 170µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.8W (Ta), 128W (Tc)
Qualification:
AEC-Q101
standardLeadTime:
14 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
4300 pF @ 25 V
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
8-LFPAK
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
41A (Ta), 235A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NVMJS1
ECCN:
EAR99
