onsemi NTMJS1D5N04CLTWG
Product Information
Maximum Continuous Drain Current:
200 A
Width:
4.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2V
Package Type:
LFPAK8
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
70 nC @ 10 V
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
110 W
Maximum Gate Source Voltage:
±20 V
Height:
1.15mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
2.2 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
SOT-1205, 8-LFPAK56
Rds On (Max) @ Id, Vgs:
1.4mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs:
70 nC @ 10 V
Vgs(th) (Max) @ Id:
2V @ 130µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.8W (Ta), 110W (Tc)
standardLeadTime:
14 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
4300 pF @ 20 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-LFPAK
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
38A (Ta), 200A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMJS1
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is NTMJS1D5N04CLTWG. While 200 a of maximum continuous drain current. Furthermore, the product is 4.9mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of lfpak8. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 70 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 110 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.15mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 2.2 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in sot-1205, 8-lfpak56. It has a maximum Rds On and voltage of 1.4mohm @ 50a, 10v. The maximum gate charge and given voltages include 70 nc @ 10 v. The typical Vgs (th) (max) of the product is 2v @ 130µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3.8w (ta), 110w (tc). It has a long 14 weeks standard lead time. The product's input capacitance at maximum includes 4300 pf @ 20 v. 8-lfpak is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 38a (ta), 200a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntmjs1, a base product number of the product. The product is designated with the ear99 code number.
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