Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
80 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
176 W
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
4V
Channel Type:
N
Width:
9.65mm
Length:
10.67mm
Maximum Drain Source Resistance:
5 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
110 A
Minimum Gate Threshold Voltage:
2V
Forward Diode Voltage:
1.25V
Height:
4.58mm
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
2.7mOhm @ 80A, 10V
Gate Charge (Qg) (Max) @ Vgs:
110 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
NTBS2D7N06M7 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/9169832
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
176W (Tj)
Input Capacitance (Ciss) (Max) @ Vds:
6655 pF @ 30 V
standardLeadTime:
7 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-263 (D2PAK)
Current - Continuous Drain (Id) @ 25°C:
110A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTBS2
ECCN:
EAR99
This is manufactured by onsemi. The manufacturer part number is NTBS2D7N06M7. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 80 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 176 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. The product carries 4v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 9.65mm wide. Its accurate length is 10.67mm. It provides up to 5 mω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 110 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2v. Its forward diode voltage is 1.25v . In addition, the height is 4.58mm. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 2.7mohm @ 80a, 10v. The maximum gate charge and given voltages include 110 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 176w (tj). The product's input capacitance at maximum includes 6655 pf @ 30 v. It has a long 7 weeks standard lead time. to-263 (d2pak) is the supplier device package value. The continuous current drain at 25°C is 110a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntbs2, a base product number of the product. The product is designated with the ear99 code number.
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