Maximum Continuous Drain Current:
76 A
Width:
4.67mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
25 nC @ 10 V
Channel Type:
N
Length:
10.36mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
107 W
Maximum Gate Source Voltage:
±20 V
Height:
15.21mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
8.5 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
8.5mOhm @ 76A, 10V
title:
FDP8D5N10C
Vgs(th) (Max) @ Id:
4V @ 130µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
2.4W (Ta), 107W (Tc)
standardLeadTime:
17 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
2475 pF @ 50 V
Mounting Type:
Through Hole
Series:
PowerTrench®
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 10 V
Supplier Device Package:
TO-220-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
76A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDP8D5
ECCN:
EAR99
