Maximum Drain Source Voltage:
100 V
Typical Gate Charge @ Vgs:
108 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
214 W
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
4V
Channel Type:
N
Width:
4.67mm
Length:
10.36mm
Maximum Drain Source Resistance:
2.3 mΩ
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
222 A
Minimum Gate Threshold Voltage:
2V
Forward Diode Voltage:
1.3V
Height:
15.21mm
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 700µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
2.3mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs:
152 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
FDP2D3N10C Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/7556819
Package:
Tube
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
214W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
11180 pF @ 50 V
standardLeadTime:
26 Weeks
Mounting Type:
Through Hole
Series:
PowerTrench®
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
222A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDP2D3
ECCN:
EAR99
