onsemi EFC2K103NUZTDG
Product Information
Maximum Drain Source Voltage:
12 V
Typical Gate Charge @ Vgs:
62 nC @ 3.8 V nC
Mounting Type:
Surface Mount
Channel Mode:
Depletion
Maximum Power Dissipation:
3.3 W
Maximum Gate Source Voltage:
±8 V
Maximum Gate Threshold Voltage:
1.3V
Height:
0.14mm
Width:
1.8mm
Length:
3.57mm
Package Type:
WLCSP
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
40 A
Minimum Gate Threshold Voltage:
0.4V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
10
Transistor Configuration:
Dual
FET Feature:
Logic Level Gate, 2.5V Drive
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.3V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
10-SMD, No Lead
Rds On (Max) @ Id, Vgs:
1.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
62nC @ 6V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
40A (Ta)
Configuration:
2 N-Channel (Dual) Common Drain
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
12V
Moisture Sensitivity Level (MSL):
Not Applicable
Input Capacitance (Ciss) (Max) @ Vds:
-
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
10-WLCSP (3.54x1.77)
Power - Max:
3.3W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
EFC2K103
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is EFC2K103NUZTDG. It has a maximum of 12 v drain source voltage. With a typical gate charge at Vgs includes 62 nc @ 3.8 v nc. The product is available in surface mount configuration. The product carries depletion channel mode. Provides up to 3.3 w maximum power dissipation. It features a maximum gate source voltage of ±8 v. The product carries 1.3v of maximum gate threshold voltage. In addition, the height is 0.14mm. Furthermore, the product is 1.8mm wide. Its accurate length is 3.57mm. The package is a sort of wlcsp. It consists of 2 elements per chip. While 40 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 0.4v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 10 pins. The product offers dual transistor configuration. The FET features of the product include logic level gate, 2.5v drive. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1.3v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 10-smd, no lead. It has a maximum Rds On and voltage of 1.8mohm @ 5a, 4.5v. The maximum gate charge and given voltages include 62nc @ 6v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 40a (ta). The product is available in 2 n-channel (dual) common drain configuration. It is shipped in tape & reel (tr) package . The product has a 12v drain to source voltage. Its typical moisture sensitivity level is not applicable. 10-wlcsp (3.54x1.77) is the supplier device package value. The maximum power of the product is 3.3w (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to efc2k103, a base product number of the product. The product is designated with the ear99 code number.
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