Maximum Continuous Drain Current:
130 mA
Width:
1.4mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
50 V
Maximum Gate Threshold Voltage:
2V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.9V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
2.2 nC @ 10 V
Channel Type:
P
Length:
3.04mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
225 mW
Maximum Gate Source Voltage:
±20 V
Height:
1.01mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
2.2V
Maximum Drain Source Resistance:
10 Ω
FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
10Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs:
2.2 nC @ 10 V
Vgs(th) (Max) @ Id:
2V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
BVSS84LT1G Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
edacadModelUrl:
/en/models/3062044
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
50 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
225mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
36 pF @ 5 V
Qualification:
AEC-Q101
standardLeadTime:
38 Weeks
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C:
130mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BVSS84
ECCN:
EAR99
This is manufactured by onsemi. The manufacturer part number is BVSS84LT1G. While 130 ma of maximum continuous drain current. Furthermore, the product is 1.4mm wide. The product complies with automotive standard - aec-q101. The product offers single transistor configuration. It has a maximum of 50 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.9v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 2.2 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.04mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 225 mw maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.01mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 2.2v . It provides up to 10 ω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. It has a maximum Rds On and voltage of 10ohm @ 100ma, 5v. The maximum gate charge and given voltages include 2.2 nc @ 10 v. The typical Vgs (th) (max) of the product is 2v @ 250µa. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v. It is shipped in tape & reel (tr) package . The product has a 50 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 225mw (ta). The product's input capacitance at maximum includes 36 pf @ 5 v. It has a long 38 weeks standard lead time. The product is automotive, a grade of class. sot-23-3 (to-236) is the supplier device package value. The continuous current drain at 25°C is 130ma (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to bvss84, a base product number of the product. The product is designated with the ear99 code number.
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