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This is manufactured by onsemi. The manufacturer part number is NTMTSC1D6N10MCTXG. It has a maximum of 100 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product ntmts, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.0017 ω maximum drain source resistance. The package is a sort of tdfnw8. It consists of 1 elements per chip. While 267 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 8 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 650µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 1.7mohm @ 90a, 10v. The maximum gate charge and given voltages include 106 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. It is shipped in tape & reel (tr) package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 5.1w (ta), 291w (tc). The product's input capacitance at maximum includes 7630 pf @ 50 v. It has a long 26 weeks standard lead time. The product is available in surface mount, wettable flank configuration. 8-tdfnw (8.3x8.4) is the supplier device package value. The continuous current drain at 25°C is 35a (ta), 267a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntmtsc1, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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