Dual P-Channel MOSFET, 900 mA, 30 V, 3-Pin SOT-23 onsemi NDS356AP
Product Information
Maximum Continuous Drain Current:
900 mA
Transistor Material:
Si
Width:
1.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
20V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3.4 nC @ 5 V
Channel Type:
P
Length:
2.92mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 mW
Series:
NDS352AP
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.94mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
0.5 Ω
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
200mOhm @ 1.3A, 10V
edacadModel:
NDS356AP Models
Gate Charge (Qg) (Max) @ Vgs:
4.4 nC @ 5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/458900
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
500mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
280 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3
Current - Continuous Drain (Id) @ 25°C:
1.1A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NDS356
ECCN:
EAR99
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FAQs
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Dual P-Channel MOSFET, 900 mA, 30 V, 3-Pin SOT-23 onsemi NDS356AP. You can also check on our website or by contacting our customer support team for further order details on Dual P-Channel MOSFET, 900 mA, 30 V, 3-Pin SOT-23 onsemi NDS356AP.
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Yes. We ship NDS356AP Internationally to many countries around the world.
This is Dual P-Channel MOSFET 900 mA 30 V 3-Pin SOT-23 manufactured by onsemi. The manufacturer part number is NDS356AP. While 900 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.4mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 20v of maximum gate threshold voltage. The package is a sort of sot-23. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 3.4 nc @ 5 v. The product is available in [Cannel Type] channel. Its accurate length is 2.92mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 500 mw maximum power dissipation. The product nds352ap, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.94mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 0.5 ω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. It has a maximum Rds On and voltage of 200mohm @ 1.3a, 10v. The maximum gate charge and given voltages include 4.4 nc @ 5 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 500mw (ta). The product's input capacitance at maximum includes 280 pf @ 10 v. sot-23-3 is the supplier device package value. The continuous current drain at 25°C is 1.1a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to nds356, a base product number of the product. The product is designated with the ear99 code number.
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