Dual N-Channel MOSFET, 500 mA, 25 V, 6-Pin SOT-363 (SC-70) onsemi FDG6303N
Product Information
Maximum Drain Source Voltage:
25 V
Typical Gate Charge @ Vgs:
1.64 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
300 mW
Maximum Gate Source Voltage:
+8 V
Height:
1mm
Width:
1.25mm
Length:
2mm
Minimum Gate Threshold Voltage:
0.65V
Package Type:
SOT-363
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
500 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
770 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
450mOhm @ 500mA, 4.5V
edacadModel:
FDG6303N Models
Gate Charge (Qg) (Max) @ Vgs:
2.3nC @ 4.5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
500mA
edacadModelUrl:
/en/models/965293
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
50pF @ 10V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SC-88 (SC-70-6)
Power - Max:
300mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDG6303
ECCN:
EAR99
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FAQs
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Dual N-Channel MOSFET, 500 mA, 25 V, 6-Pin SOT-363 (SC-70) onsemi FDG6303N. You can also check on our website or by contacting our customer support team for further order details on Dual N-Channel MOSFET, 500 mA, 25 V, 6-Pin SOT-363 (SC-70) onsemi FDG6303N.
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Yes. We ship FDG6303N Internationally to many countries around the world.
This is Dual N-Channel MOSFET 500 mA 25 V 6-Pin SOT-363 (SC-70) manufactured by onsemi. The manufacturer part number is FDG6303N. It has a maximum of 25 v drain source voltage. With a typical gate charge at Vgs includes 1.64 nc @ 5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 300 mw maximum power dissipation. It features a maximum gate source voltage of +8 v. In addition, the height is 1mm. Furthermore, the product is 1.25mm wide. Its accurate length is 2mm. Whereas its minimum gate threshold voltage includes 0.65v. The package is a sort of sot-363. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 500 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 770 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-tssop, sc-88, sot-363. It has a maximum Rds On and voltage of 450mohm @ 500ma, 4.5v. The maximum gate charge and given voltages include 2.3nc @ 4.5v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 500ma. The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 25v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 50pf @ 10v. sc-88 (sc-70-6) is the supplier device package value. The maximum power of the product is 300mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdg6303, a base product number of the product. The product is designated with the ear99 code number.
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