Maximum Drain Source Voltage:
25 V
Typical Gate Charge @ Vgs:
0.29 nC @ 4.5 V, 1.1 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
300 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
1mm
Width:
1.25mm
Length:
2mm
Minimum Gate Threshold Voltage:
0.65V
Package Type:
SOT-363
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
220 mA, 410 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
1.9 Ω, 7 Ω
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
4Ohm @ 220mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
0.4nC @ 4.5V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
220mA, 410mA
Configuration:
N and P-Channel
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
9.5pF @ 10V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SC-88 (SC-70-6)
Packaging:
Tape & Reel (TR)
Power - Max:
300mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDG6322
ECCN:
EAR99
