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Dual P-Channel MOSFET, 900 mA, 30 V, 3-Pin SOT-23 onsemi NDS352AP

NDS352AP Dual P-Channel MOSFET, 900 mA, 30 V, 3-Pin SOT-23 onsemi
NDS352AP
NDS352AP
onsemi

Product Information

Maximum Continuous Drain Current:
900 mA
Transistor Material:
Si
Width:
1.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
20V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.8V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
2 nC @ 4.5 V
Channel Type:
P
Length:
2.92mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 mW
Series:
NDS352AP
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.94mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
0.5 Ω
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
300mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs:
3 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
NDS352AP Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/458913
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
500mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
135 pF @ 15 V
standardLeadTime:
25 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3
Current - Continuous Drain (Id) @ 25°C:
900mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NDS352
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is Dual P-Channel MOSFET 900 mA 30 V 3-Pin SOT-23 manufactured by onsemi. The manufacturer part number is NDS352AP. While 900 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.4mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 20v of maximum gate threshold voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.8v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 2 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 2.92mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 500 mw maximum power dissipation. The product nds352ap, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.94mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 0.5 ω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. It has a maximum Rds On and voltage of 300mohm @ 1a, 10v. The maximum gate charge and given voltages include 3 nc @ 4.5 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 500mw (ta). The product's input capacitance at maximum includes 135 pf @ 15 v. It has a long 25 weeks standard lead time. sot-23-3 is the supplier device package value. The continuous current drain at 25°C is 900ma (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to nds352, a base product number of the product. The product is designated with the ear99 code number.

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Trans MOSFET P-CH 30V 0.9A 3- SuperSOT(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Mult Dev Assembly Chgs 12/Jul/2020(PCN Assembly/Origin)
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Standard Marking Lay-out 16/Nov/2021(PCN Design/Specification)
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Standard Marking Lay-out 10/Oct/2022(PCN Design/Specification)
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NDS352AP(Datasheets)
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Binary Year Code Marking 15/Jan/2014(PCN Packaging)
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Mult Devices 24/Oct/2017(PCN Packaging)

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Yes. You can also search NDS352AP on website for other similar products.
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You can order onsemi brand products with NDS352AP directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Dual P-Channel MOSFET, 900 mA, 30 V, 3-Pin SOT-23 onsemi NDS352AP. You can also check on our website or by contacting our customer support team for further order details on Dual P-Channel MOSFET, 900 mA, 30 V, 3-Pin SOT-23 onsemi NDS352AP.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21480337 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21480337.
Yes. We ship NDS352AP Internationally to many countries around the world.