N-Channel MOSFET, 68 A, 80 V, 8-Pin WDFN onsemi NTTFS6H850NTAG
Product Information
Maximum Continuous Drain Current:
68 A
Width:
3.15mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
80 V
Maximum Gate Threshold Voltage:
4V
Package Type:
WDFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
3.6 nC @ 10 V
Channel Type:
N
Length:
3.15mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
107 W
Maximum Gate Source Voltage:
±20 V
Height:
0.75mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
9.5 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 70µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
9.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs:
19 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.2W (Ta), 107W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1140 pF @ 40 V
standardLeadTime:
23 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-WDFN (3.3x3.3)
Current - Continuous Drain (Id) @ 25°C:
11A (Ta), 68A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTTFS6
ECCN:
EAR99
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This is N-Channel MOSFET 68 A 80 V 8-Pin WDFN manufactured by onsemi. The manufacturer part number is NTTFS6H850NTAG. While 68 a of maximum continuous drain current. Furthermore, the product is 3.15mm wide. The product offers single transistor configuration. It has a maximum of 80 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of wdfn. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 3.6 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.15mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 107 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 0.75mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 9.5 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 70µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 8-powerwdfn. It has a maximum Rds On and voltage of 9.5mohm @ 10a, 10v. The maximum gate charge and given voltages include 19 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. It is shipped in tape & reel (tr) package . The product has a 80 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3.2w (ta), 107w (tc). The product's input capacitance at maximum includes 1140 pf @ 40 v. It has a long 23 weeks standard lead time. 8-wdfn (3.3x3.3) is the supplier device package value. The continuous current drain at 25°C is 11a (ta), 68a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to nttfs6, a base product number of the product. The product is designated with the ear99 code number.
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