Forward Voltage Vf:
0.9V
Width:
5.1 mm
Maximum Drain Source Resistance Rds:
7.4mΩ
Automotive Standard:
AEC-Q101
Transistor Configuration:
Dual
Typical Gate Charge Qg @ Vgs:
16nC
Package Type:
DFN
Number of Elements per Chip:
2
Maximum Continuous Drain Current Id:
52A
Product Type:
Power MOSFET
Maximum Operating Temperature:
175°C
Maximum Drain Source Voltage Vds:
40V
Channel Type:
Type N
Length:
6.1mm
Standards/Approvals:
PPAP capable, AEC-Q101, RoHS
Pin Count:
8
Mount Type:
Surface
Maximum Power Dissipation Pd:
40W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
±20 V
Series:
NVMFD5C466NL
Height:
1.05mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
7.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs:
7nC @ 4.5V
Vgs(th) (Max) @ Id:
2.2V @ 30µA
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
14A (Ta), 52A (Tc)
Configuration:
2 N-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
40V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Qualification:
AEC-Q101
standardLeadTime:
26 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
997pF @ 25V
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
8-DFN (5x6) Dual Flag (SO8FL-Dual)
Packaging:
Tape & Reel (TR)
Power - Max:
3W (Ta), 40W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NVMFD5
ECCN:
EAR99
