N-Channel MOSFET, 41 A, 40 V, 8-Pin WDFN onsemi NVTFS5C471NLWFTAG
Product Information
Maximum Continuous Drain Current:
41 A
Width:
3.15mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
WDFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
5.5 nC @ 4.5 V
Channel Type:
N
Length:
3.15mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
30 W
Series:
NVTFS5C471NL
Maximum Gate Source Voltage:
±20 V
Height:
0.75mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
15.5 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
9mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs:
5.5 nC @ 4.5 V
Vgs(th) (Max) @ Id:
2.2V @ 20µA
REACH Status:
REACH Unaffected
edacadModel:
NVTFS5C471NLWFTAG Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/7556393
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
30W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
660 pF @ 25 V
Qualification:
AEC-Q101
standardLeadTime:
7 Weeks
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
8-WDFN (3.3x3.3)
Current - Continuous Drain (Id) @ 25°C:
41A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NVTFS5
ECCN:
EAR99
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FAQs
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This is N-Channel MOSFET 41 A 40 V 8-Pin WDFN manufactured by onsemi. The manufacturer part number is NVTFS5C471NLWFTAG. While 41 a of maximum continuous drain current. Furthermore, the product is 3.15mm wide. The product complies with automotive standard - aec-q101. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 2.2v of maximum gate threshold voltage. The package is a sort of wdfn. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 5.5 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 3.15mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 30 w maximum power dissipation. The product nvtfs5c471nl, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 0.75mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 15.5 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 8-powerwdfn. It has a maximum Rds On and voltage of 9mohm @ 10a, 10v. The maximum gate charge and given voltages include 5.5 nc @ 4.5 v. The typical Vgs (th) (max) of the product is 2.2v @ 20µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 30w (tc). The product's input capacitance at maximum includes 660 pf @ 25 v. It has a long 7 weeks standard lead time. The product is automotive, a grade of class. 8-wdfn (3.3x3.3) is the supplier device package value. The continuous current drain at 25°C is 41a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to nvtfs5, a base product number of the product. The product is designated with the ear99 code number.
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