N-Channel MOSFET, 2.8 A, 600 V, 3-Pin DPAK onsemi FQD5N60CTM
Product Information
Maximum Continuous Drain Current:
2.8 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
15 nC @ 10 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
49 W
Series:
QFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
2.39mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
2.5 Ω
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
2.5Ohm @ 1.4A, 10V
Gate Charge (Qg) (Max) @ Vgs:
19 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.5W (Ta), 49W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
670 pF @ 25 V
standardLeadTime:
12 Weeks
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
TO-252AA
Current - Continuous Drain (Id) @ 25°C:
2.8A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQD5N60
ECCN:
EAR99
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FAQs
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This is N-Channel MOSFET 2.8 A 600 V 3-Pin DPAK manufactured by onsemi. The manufacturer part number is FQD5N60CTM. While 2.8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 15 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 49 w maximum power dissipation. The product qfet, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 2.39mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 2.5 ω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 2.5ohm @ 1.4a, 10v. The maximum gate charge and given voltages include 19 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 2.5w (ta), 49w (tc). The product's input capacitance at maximum includes 670 pf @ 25 v. It has a long 12 weeks standard lead time. The product qfet®, is a highly preferred choice for users. to-252aa is the supplier device package value. The continuous current drain at 25°C is 2.8a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fqd5n60, a base product number of the product. The product is designated with the ear99 code number.
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