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N-Channel MOSFET, 6.1 A, 30 V, 6-Pin SOT-23 onsemi FDC855N

FDC855N N-Channel MOSFET, 6.1 A, 30 V, 6-Pin SOT-23 onsemi
onsemi

Product Information

Maximum Continuous Drain Current:
6.1 A
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
9.2 nC @ 10 V
Channel Type:
N
Length:
3mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.6 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
39 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
27mOhm @ 6.1A, 10V
Gate Charge (Qg) (Max) @ Vgs:
13 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
FDC855N Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/1830666
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1.6W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
655 pF @ 15 V
standardLeadTime:
8 Weeks
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
SuperSOT™-6
Current - Continuous Drain (Id) @ 25°C:
6.1A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDC855
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is N-Channel MOSFET 6.1 A 30 V 6-Pin SOT-23 manufactured by onsemi. The manufacturer part number is FDC855N. While 6.1 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.7mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 9.2 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.6 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 39 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. It has a maximum Rds On and voltage of 27mohm @ 6.1a, 10v. The maximum gate charge and given voltages include 13 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 1.6w (ta). The product's input capacitance at maximum includes 655 pf @ 15 v. It has a long 8 weeks standard lead time. The product powertrench®, is a highly preferred choice for users. supersot™-6 is the supplier device package value. The continuous current drain at 25°C is 6.1a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdc855, a base product number of the product. The product is designated with the ear99 code number.

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FDC855N, Single N-Channel, Logic Level, PowerTrench MOSFET 30V 6.1A 27mOhm Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Mult Changes 14/Jun/2019(PCN Assembly/Origin)
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Mold Compound 08/April/2008(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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FDC855N(Datasheets)
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Binary Year Code Marking 15/Jan/2014(PCN Packaging)
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Mult Devices 24/Oct/2017(PCN Packaging)

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FAQs

Yes. You can also search FDC855N on website for other similar products.
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You can order onsemi brand products with FDC855N directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel MOSFET, 6.1 A, 30 V, 6-Pin SOT-23 onsemi FDC855N. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 6.1 A, 30 V, 6-Pin SOT-23 onsemi FDC855N.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21471112 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21471112.
Yes. We ship FDC855N Internationally to many countries around the world.