Automotive Standard:
No
Maximum Power Dissipation Pd:
625mW
Product Type:
Field Effect Transistor
Maximum Drain Source Voltage Vds:
60V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
±20 V
Series:
BS270
Forward Voltage Vf:
1.2V
Height:
4.7mm
Width:
3.93 mm
Length:
4.7mm
Package Type:
TO-92
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
2Ω
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
400mA
Channel Type:
Type N
Maximum Operating Temperature:
150°C
Pin Count:
3
Mount Type:
Through Hole
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Rds On (Max) @ Id, Vgs:
2Ohm @ 500mA, 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
625mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
50 pF @ 25 V
standardLeadTime:
10 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Current - Continuous Drain (Id) @ 25°C:
400mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BS270
ECCN:
EAR99
