onsemi FDD18N20LZ, N-Channel MOSFET, 16 A, 200 V, 3-Pin DPAK
Product Information
The FDD18N20LZ is a rugged N-Channel MOSFET, offering superior power efficiency with a 16A, 200V capacity, all housed in a compact 3-pin DPAK package. Engineered by ON Semiconductor that balances powerful performance and reliable operation.
Maximum Continuous Drain Current:
16 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
30 nC @ 10 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
89 W
Series:
UniFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.39mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
130 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
125mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs:
40 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
89W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1575 pF @ 25 V
standardLeadTime:
10 Weeks
Mounting Type:
Surface Mount
Series:
UniFET™
Supplier Device Package:
TO-252AA
Current - Continuous Drain (Id) @ 25°C:
16A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDD18N20
ECCN:
EAR99
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The FDD18N20LZ is an N-Channel MOSFET that can handle a maximum drain current of 16 A and withstand a voltage of up to 200 V. It comes in a 3-pin DPAK (TO-252) package, which offers excellent thermal dissipation capabilities. The compact and robust package makes it suitable for space-constrained applications while maintaining reliable electrical connections. Its low on-resistance, high switching speed, and built-in protection mechanisms make it an ideal choice for high-power applications that demand reliable and efficient performance. With the FDD18N20LZ, designers can achieve optimal power management and enhance the overall efficiency of their circuits.
Key Specification and Advatages of Using onsemi FDD18N20LZ, N-Channel MOSFET, 16 A, 200 V, 3-Pin DPAK:
One of the standout features of the FDD18N20LZ is its low on-resistance. The low on-resistance reduces conduction losses, allowing for high current-handling capability and improved thermal performance. With a typical RDS(ON) value of 0.094 ohms, this MOSFET minimizes power losses and increases overall system efficiency.
The FDD18N20LZ offers fast switching characteristics, enabling efficient operation in high-frequency applications. It boasts a low gate charge and gate-to-drain charge, which facilitates rapid switching transitions and minimizes power dissipation during switching. This attribute is precious in power conversion circuits and motor control applications.
To safeguard against potential electrical hazards, the FDD18N20LZ incorporates a range of protection features. These include built-in diodes (body diode and fast recovery diode), which ensure safe and reliable operation during switching transients. Additionally, the MOSFET incorporates ESD protection, resisting electrostatic discharge and enhancing overall device reliability.
Versatile Uses of onsemi FDD18N20LZ, N-Channel MOSFET, 16 A, 200 V, 3-Pin DPAK :
The FDD18N20LZ is well-suited for various high-power applications, including motor control, power supplies, inverters, and DC-DC converters. Its combination of high current and voltage ratings, low on-resistance, and quick switching speed make it an ideal choice for demanding applications that require efficient power management and high reliability.
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