Forward Voltage Vf:
-1.2V
Width:
6.22 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
19nC
Package Type:
TO-252
Maximum Continuous Drain Current Id:
8.4A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
42mΩ
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
40V
Channel Type:
Type P
Length:
6.73mm
Standards/Approvals:
No
Pin Count:
3
Mount Type:
Surface
Maximum Power Dissipation Pd:
69W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
PowerTrench
Height:
2.39mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
27mOhm @ 8.4A, 10V
title:
FDD4685
Vgs(th) (Max) @ Id:
3V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
FDD4685 Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/1287245
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
69W (Tc)
standardLeadTime:
25 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
2380 pF @ 20 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Gate Charge (Qg) (Max) @ Vgs:
27 nC @ 5 V
Supplier Device Package:
TO-252AA
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
8.4A (Ta), 32A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDD468
ECCN:
EAR99
