Forward Voltage Vf:
0.8V
Width:
6 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
28nC
Package Type:
WDFN
Maximum Continuous Drain Current Id:
48A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
29mΩ
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
80V
Channel Type:
Type N
Length:
5mm
Standards/Approvals:
No
Pin Count:
8
Mount Type:
Surface
Maximum Power Dissipation Pd:
78W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
UltraFET
Height:
0.75mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
16.5mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs:
40 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.5W (Ta), 78W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2490 pF @ 40 V
standardLeadTime:
11 Weeks
Mounting Type:
Surface Mount
Series:
UltraFET™
Supplier Device Package:
8-MLP (5x6), Power56
Current - Continuous Drain (Id) @ 25°C:
8.8A (Ta), 22A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMS35
ECCN:
EAR99
