Maximum Drain Source Voltage:
80 V
Typical Gate Charge @ Vgs:
28 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
78 W
Series:
UltraFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.75mm
Width:
6mm
Length:
5mm
Maximum Drain Source Resistance:
29 mΩ
Package Type:
PQFN8
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
48 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
16.5mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs:
40 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.5W (Ta), 78W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2490 pF @ 40 V
standardLeadTime:
11 Weeks
Mounting Type:
Surface Mount
Series:
UltraFET™
Supplier Device Package:
8-MLP (5x6), Power56
Current - Continuous Drain (Id) @ 25°C:
8.8A (Ta), 22A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMS35
ECCN:
EAR99
