Automotive Standard:
No
Maximum Power Dissipation Pd:
90W
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
60V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
51nC
Series:
RFD16N06LESM
Maximum Gate Source Voltage Vgs:
10 V
Height:
2.39mm
Width:
6.22 mm
Length:
6.73mm
Package Type:
TO-252
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
47mΩ
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
16A
Channel Type:
Type N
Maximum Operating Temperature:
175°C
Pin Count:
3
Mount Type:
Surface
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
47mOhm @ 16A, 5V
Gate Charge (Qg) (Max) @ Vgs:
62 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
+10V, -8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
90W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1350 pF @ 25 V
standardLeadTime:
10 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-252AA
Current - Continuous Drain (Id) @ 25°C:
16A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
RFD16N06
ECCN:
EAR99
