Forward Voltage Vf:
0.78V
Width:
1.7 mm
Maximum Drain Source Resistance Rds:
152mΩ
Automotive Standard:
No
Transistor Configuration:
Isolated
Typical Gate Charge Qg @ Vgs:
2.3nC
Package Type:
SOT-23
Number of Elements per Chip:
2
Maximum Continuous Drain Current Id:
2.5A
Product Type:
MOSFET
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
30V
Channel Type:
Type N
Length:
3mm
Standards/Approvals:
No
Pin Count:
6
Mount Type:
Surface
Maximum Power Dissipation Pd:
960mW
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
PowerTrench
Height:
1mm
Minimum Operating Temperature:
-55°C
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
95mOhm @ 2.5A, 10V
title:
FDC6561AN
Vgs(th) (Max) @ Id:
3V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
FDC6561AN Models
Current - Continuous Drain (Id) @ 25°C:
2.5A
edacadModelUrl:
/en/models/965289
Configuration:
2 N-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
220pF @ 15V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Gate Charge (Qg) (Max) @ Vgs:
3.2nC @ 5V
Supplier Device Package:
SuperSOT™-6
Packaging:
Tape & Reel (TR)
Power - Max:
700mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDC6561
ECCN:
EAR99
