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Dual N-Channel MOSFET, 2.5 A, 30 V, 6-Pin SOT-23 onsemi FDC6561AN

FDC6561AN Dual N-Channel MOSFET, 2.5 A, 30 V, 6-Pin SOT-23 onsemi
onsemi

Product Information

Maximum Continuous Drain Current:
2.5 A
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Package Type:
SOT-23
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
2.3 nC @ 5 V
Channel Type:
N
Length:
3mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
960 mW
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
152 mΩ
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
95mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
3.2nC @ 5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
FDC6561AN Models
Current - Continuous Drain (Id) @ 25°C:
2.5A
edacadModelUrl:
/en/models/965289
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
220pF @ 15V
standardLeadTime:
34 Weeks
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
SuperSOT™-6
Power - Max:
700mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDC6561
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is Dual N-Channel MOSFET 2.5 A 30 V 6-Pin SOT-23 manufactured by onsemi. The manufacturer part number is FDC6561AN. While 2.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.7mm wide. The product offers isolated transistor configuration. It has a maximum of 30 v drain source voltage. The package is a sort of sot-23. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 2.3 nc @ 5 v. The product is available in [Cannel Type] channel. Its accurate length is 3mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 960 mw maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 152 mω maximum drain source resistance. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. It has a maximum Rds On and voltage of 95mohm @ 2.5a, 10v. The maximum gate charge and given voltages include 3.2nc @ 5v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 2.5a. The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 220pf @ 15v. It has a long 34 weeks standard lead time. The product powertrench®, is a highly preferred choice for users. supersot™-6 is the supplier device package value. The maximum power of the product is 700mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdc6561, a base product number of the product. The product is designated with the ear99 code number.

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FDC6561AN, Dual N-Channel Logic Level PowerTrench™ MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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Mult Dev Assembly Chgs 21/Dec/2020(PCN Assembly/Origin)
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Marking Change 07/Oct/2022(PCN Design/Specification)
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Marking Change 17/Nov/2021(PCN Design/Specification)
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FDC6561AN(Datasheets)
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Marking Change 07/Oct/2022(PCN Packaging)
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Mult Devices 24/Oct/2017(PCN Packaging)

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You can order onsemi brand products with FDC6561AN directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Dual N-Channel MOSFET, 2.5 A, 30 V, 6-Pin SOT-23 onsemi FDC6561AN. You can also check on our website or by contacting our customer support team for further order details on Dual N-Channel MOSFET, 2.5 A, 30 V, 6-Pin SOT-23 onsemi FDC6561AN.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21470847 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21470847.
Yes. We ship FDC6561AN Internationally to many countries around the world.