N-Channel MOSFET, 12 A, 60 V, 3-Pin DPAK onsemi MTD3055VL
Product Information
Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
10 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
48 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.39mm
Width:
6.22mm
Length:
6.73mm
Minimum Gate Threshold Voltage:
1V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
12 A
Transistor Material:
Si
Maximum Drain Source Resistance:
180 mΩ
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
180mOhm @ 6A, 5V
edacadModel:
MTD3055VL Models
Gate Charge (Qg) (Max) @ Vgs:
10 nC @ 5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
edacadModelUrl:
/en/models/1056000
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.9W (Ta), 48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
570 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-252AA
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
MTD3055
ECCN:
EAR99
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FAQs
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You will get a confirmation email regarding your order of N-Channel MOSFET, 12 A, 60 V, 3-Pin DPAK onsemi MTD3055VL. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 12 A, 60 V, 3-Pin DPAK onsemi MTD3055VL.
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Yes. We ship MTD3055VL Internationally to many countries around the world.
This is N-Channel MOSFET 12 A 60 V 3-Pin DPAK manufactured by onsemi. The manufacturer part number is MTD3055VL. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 10 nc @ 5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 48 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.39mm. Furthermore, the product is 6.22mm wide. Its accurate length is 6.73mm. Whereas its minimum gate threshold voltage includes 1v. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 12 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 180 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 180mohm @ 6a, 5v. The maximum gate charge and given voltages include 10 nc @ 5 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v. It is shipped in tape & reel (tr) package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3.9w (ta), 48w (tc). The product's input capacitance at maximum includes 570 pf @ 25 v. to-252aa is the supplier device package value. The continuous current drain at 25°C is 12a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to mtd3055, a base product number of the product. The product is designated with the ear99 code number.
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