Forward Voltage Vf:
0.74V
Width:
3.9 mm
Maximum Drain Source Resistance Rds:
82mΩ
Automotive Standard:
No
Transistor Configuration:
Isolated
Typical Gate Charge Qg @ Vgs:
25nC
Package Type:
SOIC
Number of Elements per Chip:
2
Maximum Continuous Drain Current Id:
4.7A
Product Type:
MOSFET
Maximum Operating Temperature:
175°C
Maximum Drain Source Voltage Vds:
80V
Channel Type:
Type N
Length:
4.9mm
Standards/Approvals:
No
Pin Count:
8
Mount Type:
Surface
Maximum Power Dissipation Pd:
2W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
PowerTrench
Height:
1.575mm
Minimum Operating Temperature:
-55°C
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
44mOhm @ 4.7A, 10V
title:
FDS3890
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
4.7A
Configuration:
2 N-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
80V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
22 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1180pF @ 40V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Gate Charge (Qg) (Max) @ Vgs:
35nC @ 10V
Supplier Device Package:
8-SOIC
Packaging:
Tape & Reel (TR)
Power - Max:
900mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDS38
ECCN:
EAR99
