Forward Voltage Vf:
-0.8V
Width:
4 mm
Maximum Drain Source Resistance Rds:
500mΩ
Automotive Standard:
No
Transistor Configuration:
Isolated
Typical Gate Charge Qg @ Vgs:
9nC
Package Type:
SOIC
Number of Elements per Chip:
2
Maximum Continuous Drain Current Id:
2.3A
Product Type:
MOSFET
Maximum Operating Temperature:
175°C
Maximum Drain Source Voltage Vds:
60V
Channel Type:
Type P
Length:
5mm
Standards/Approvals:
No
Pin Count:
8
Mount Type:
Surface
Maximum Power Dissipation Pd:
2W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
PowerTrench
Height:
1.5mm
Minimum Operating Temperature:
-55°C
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
250mOhm @ 2.3A, 10V
Gate Charge (Qg) (Max) @ Vgs:
13nC @ 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
2.3A
Configuration:
2 P-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
60V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
394pF @ 30V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-SOIC
Packaging:
Tape & Reel (TR)
Power - Max:
900mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NDS994
ECCN:
EAR99
