Forward Voltage Vf:
0.8V
Width:
5 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
29nC
Package Type:
SOIC
Maximum Continuous Drain Current Id:
11.2A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
17mΩ
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
100V
Channel Type:
Type N
Length:
4mm
Standards/Approvals:
No
Pin Count:
8
Mount Type:
Surface
Maximum Power Dissipation Pd:
5W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
PowerTrench
Height:
1.5mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
9.8mOhm @ 11.2A, 10V
Gate Charge (Qg) (Max) @ Vgs:
41 nC @ 10 V
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.5W (Ta), 5W (Tc)
standardLeadTime:
20 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
2580 pF @ 50 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-SOIC
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
11.2A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDS86
ECCN:
EAR99
