Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
7.7 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.5mm
Width:
4mm
Length:
5mm
Minimum Gate Threshold Voltage:
1V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
6 A
Transistor Material:
Si
Maximum Drain Source Resistance:
29 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
29mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs:
11nC @ 5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
6A
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
40V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
955pF @ 20V
standardLeadTime:
25 Weeks
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-SOIC
Power - Max:
2W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDS89
ECCN:
EAR99
This is Dual N-Channel MOSFET 6 A 40 V 8-Pin SOIC manufactured by onsemi. The manufacturer part number is FDS8949. It has a maximum of 40 v drain source voltage. With a typical gate charge at Vgs includes 7.7 nc @ 5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.5mm. Furthermore, the product is 4mm wide. Its accurate length is 5mm. Whereas its minimum gate threshold voltage includes 1v. The package is a sort of soic. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 29 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers isolated transistor configuration. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 29mohm @ 6a, 10v. The maximum gate charge and given voltages include 11nc @ 5v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 6a. The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 40v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 955pf @ 20v. It has a long 25 weeks standard lead time. The product powertrench®, is a highly preferred choice for users. 8-soic is the supplier device package value. The maximum power of the product is 2w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fds89, a base product number of the product. The product is designated with the ear99 code number.
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