Forward Voltage Vf:
-4V
Width:
6.1 mm
Automotive Standard:
AEC-Q101
Typical Gate Charge Qg @ Vgs:
12nC
Package Type:
TO-252
Maximum Continuous Drain Current Id:
6.6A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
530mΩ
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
100V
Channel Type:
Type P
Length:
6.6mm
Standards/Approvals:
No
Pin Count:
3
Mount Type:
Surface
Maximum Power Dissipation Pd:
2.5W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
30 V
Series:
QFET
Height:
2.3mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
530mOhm @ 3.3A, 10V
Gate Charge (Qg) (Max) @ Vgs:
15 nC @ 10 V
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.5W (Ta), 44W (Tc)
standardLeadTime:
34 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
470 pF @ 25 V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
TO-252AA
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
6.6A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQD8P10
ECCN:
EAR99
