Automotive Standard:
No
Maximum Power Dissipation Pd:
2.5W
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
30V
Channel Mode:
Enhancement
Series:
PowerTrench
Forward Voltage Vf:
0.7V
Height:
1.5mm
Typical Gate Charge Qg @ Vgs:
21nC
Length:
5mm
Package Type:
SOIC
Minimum Operating Temperature:
-55?C
Maximum Drain Source Resistance Rds:
8m?
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
13A
Channel Type:
Type N
Maximum Operating Temperature:
150?C
Pin Count:
8
Mount Type:
Surface
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
8mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs:
30 nC @ 5 V
Vgs(th) (Max) @ Id:
3V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
FDS6670A Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/458849
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.5W (Ta)
standardLeadTime:
14 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
2220 pF @ 15 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-SOIC
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
13A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDS6670
ECCN:
EAR99
