Maximum Drain Source Voltage:
200 V
Typical Gate Charge @ Vgs:
49 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
357 W
Series:
UniFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
4.572mm
Width:
10.16mm
Length:
9.98mm
Minimum Gate Threshold Voltage:
3V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
52 A
Transistor Material:
Si
Maximum Drain Source Resistance:
49 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
49mOhm @ 26A, 10V
title:
FDB52N20TM
Vgs(th) (Max) @ Id:
5V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
357W (Tc)
standardLeadTime:
26 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
2900 pF @ 25 V
Mounting Type:
Surface Mount
Series:
UniFET™
Gate Charge (Qg) (Max) @ Vgs:
63 nC @ 10 V
Supplier Device Package:
TO-263 (D2PAK)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
52A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDB52N20
ECCN:
EAR99
