Forward Voltage Vf:
1.5V
Width:
9.65 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
75nC
Package Type:
TO-263
Maximum Continuous Drain Current Id:
55A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
26mΩ
Maximum Operating Temperature:
175°C
Maximum Drain Source Voltage Vds:
100V
Channel Type:
Type N
Length:
10.67mm
Standards/Approvals:
No
Pin Count:
3
Mount Type:
Surface
Maximum Power Dissipation Pd:
3.75W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
25 V
Series:
QFET
Height:
4.83mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
26mOhm @ 27.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
98 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
FQB55N10TM Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/965345
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.75W (Ta), 155W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2730 pF @ 25 V
standardLeadTime:
10 Weeks
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
TO-263 (D2PAK)
Current - Continuous Drain (Id) @ 25°C:
55A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQB55N10
ECCN:
EAR99
