Forward Voltage Vf:
-5V
Width:
9.65 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
31nC
Package Type:
TO-263
Maximum Continuous Drain Current Id:
11.5A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
470mΩ
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
200V
Channel Type:
Type P
Length:
10.67mm
Standards/Approvals:
No
Pin Count:
3
Mount Type:
Surface
Maximum Power Dissipation Pd:
3.13W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
30 V
Series:
QFET
Height:
4.83mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
470mOhm @ 5.75A, 10V
edacadModel:
FQB12P20TM Models
Gate Charge (Qg) (Max) @ Vgs:
40 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/1056133
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.13W (Ta), 120W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1200 pF @ 25 V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
TO-263 (D2PAK)
Current - Continuous Drain (Id) @ 25°C:
11.5A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQB12P20
ECCN:
EAR99
