Width:
4 mm
Maximum Drain Source Resistance Rds:
23mΩ
Automotive Standard:
No
Transistor Configuration:
Isolated
Typical Gate Charge Qg @ Vgs:
9.2nC
Package Type:
SOIC
Number of Elements per Chip:
2
Maximum Continuous Drain Current Id:
7A
Product Type:
Power MOSFET
Maximum Operating Temperature:
-55°C
Maximum Drain Source Voltage Vds:
30V
Channel Type:
Type N
Length:
5mm
Standards/Approvals:
No
Pin Count:
8
Mount Type:
Surface
Maximum Power Dissipation Pd:
1.6W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
PowerTrench
Height:
1.5mm
Minimum Operating Temperature:
150°C
FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
23mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs:
13nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
FDS8984 Models
Current - Continuous Drain (Id) @ 25°C:
7A
edacadModelUrl:
/en/models/1245054
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
635pF @ 15V
standardLeadTime:
33 Weeks
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-SOIC
Power - Max:
1.6W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDS89
ECCN:
EAR99
