Maximum Continuous Drain Current:
350 mA, 600 mA
Transistor Material:
Si
Width:
1.2mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
20 V
Package Type:
SC-89-6
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1 nC @ 4.5 V, 8 nC @ 4.5 V
Channel Type:
N, P
Length:
1.6mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
625 mW
Series:
PowerTrench
Maximum Gate Source Voltage:
-12 V, -8 V, +12 V, +8 V
Height:
0.5mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
1.2 Ω, 700 mΩ
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-563, SOT-666
Rds On (Max) @ Id, Vgs:
700mOhm @ 600mA, 4.5V
edacadModel:
FDY4000CZ Models
Gate Charge (Qg) (Max) @ Vgs:
1.1nC @ 4.5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
600mA, 350mA
edacadModelUrl:
/en/models/1217886
Configuration:
N and P-Channel
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
60pF @ 10V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
SOT-563F
Power - Max:
446mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDY4000
ECCN:
EAR99
