Maximum Drain Source Voltage:
50 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
250 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2V
Height:
1mm
Width:
1.4mm
Length:
3mm
Minimum Gate Threshold Voltage:
0.8V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Continuous Drain Current:
130 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
10 Ω
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
8Ohm @ 150mA, 10V
Gate Charge (Qg) (Max) @ Vgs:
1.3 nC @ 5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
BSS84 Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/244213
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
50 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
225mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
73 pF @ 25 V
standardLeadTime:
13 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C:
130mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BSS84
ECCN:
EAR99
This is P-Channel MOSFET 130 mA 50 V 3-Pin SOT-23 manufactured by onsemi. The manufacturer part number is BSS84. It has a maximum of 50 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 250 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2v of maximum gate threshold voltage. In addition, the height is 1mm. Furthermore, the product is 1.4mm wide. Its accurate length is 3mm. Whereas its minimum gate threshold voltage includes 0.8v. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. While 130 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 10 ω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. It has a maximum Rds On and voltage of 8ohm @ 150ma, 10v. The maximum gate charge and given voltages include 1.3 nc @ 5 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 50 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 225mw (ta). The product's input capacitance at maximum includes 73 pf @ 25 v. It has a long 13 weeks standard lead time. sot-23-3 (to-236) is the supplier device package value. The continuous current drain at 25°C is 130ma (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to bss84, a base product number of the product. The product is designated with the ear99 code number.
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