Maximum Continuous Drain Current:
45 A
Transistor Material:
Si
Width:
6.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
150 V
Package Type:
PQFN8
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
45 nC @ 10 V
Channel Type:
N
Length:
5.1mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
113 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
25 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
12.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs:
63 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
150 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.7W (Ta), 113W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
4480 pF @ 75 V
standardLeadTime:
20 Weeks
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-PQFN (5x6)
Current - Continuous Drain (Id) @ 25°C:
10A (Ta), 45A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMS86
ECCN:
EAR99
The FDMS86255 is a high-performance N-Channel MOSFET designed by ON Semiconductor, a leading supplier of power management and semiconductor solutions. This device offers exceptional power handling capabilities and is specifically designed for applications that require efficient switching and high power density.
Features and Specifications of FDMS86255, onsemi, N-Channel MOSFET:
Advanced Technology:
ON Semiconductor has leveraged advanced process technology to develop the FDMS86255 MOSFET. It utilizes a trench-gate structure that enhances its performance characteristics. The trench-gate design reduces gate charge and improves switching speed, enabling fast and efficient operation. Moreover, this MOSFET is built using a high-density cell design, allowing it to achieve higher power density within a smaller footprint.
FDMS86255, onsemi, N-Channel MOSFET: Reliability and Protection Features
To ensure long-term reliability and robustness, the FDMS86255 incorporates various protection features.
Application Areas:
The FDMS86255 is highly versatile and finds application in various fields.
Reviews
Don’t hesitate to ask questions for better clarification.