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N-Channel MOSFET, 12 A, 150 V, 8-Pin Power 56 onsemi FDMS86252L

FDMS86252L N-Channel MOSFET, 12 A, 150 V, 8-Pin Power 56 onsemi
FDMS86252L
FDMS86252L
onsemi

Product Information

Maximum Continuous Drain Current:
12 A
Transistor Material:
Si
Width:
5.85mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
150 V
Package Type:
PQFN8
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
15 nC @ 10 V
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
50 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
110 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
56mOhm @ 4.4A, 10V
Gate Charge (Qg) (Max) @ Vgs:
21 nC @ 10 V
Vgs(th) (Max) @ Id:
3V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
FDMS86252L Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/4555504
Drain to Source Voltage (Vdss):
150 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.5W (Ta), 50W (Tc)
standardLeadTime:
20 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1335 pF @ 75 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-PQFN (5x6)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
4.4A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMS86252
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is N-Channel MOSFET 12 A 150 V 8-Pin Power 56 manufactured by onsemi. The manufacturer part number is FDMS86252L. While 12 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.85mm wide. The product offers single transistor configuration. It has a maximum of 150 v drain source voltage. The package is a sort of pqfn8. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 15 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 50 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.05mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 110 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 56mohm @ 4.4a, 10v. The maximum gate charge and given voltages include 21 nc @ 10 v. The typical Vgs (th) (max) of the product is 3v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 150 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 2.5w (ta), 50w (tc). It has a long 20 weeks standard lead time. The product's input capacitance at maximum includes 1335 pf @ 75 v. The product powertrench®, is a highly preferred choice for users. 8-pqfn (5x6) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 4.4a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdms86252, a base product number of the product. The product is designated with the ear99 code number.

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FDMS86252L, N-Channel Shielded Gate PowerTrench MOSFET 150V, 12A, 56mOhm(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Wafer 6/8 Inch Addition 16/Jun/2014(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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FDMS86252L(Datasheets)
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Black Plastic Reel Update 30/Jun/2015(PCN Packaging)
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Mult Devices 24/Oct/2017(PCN Packaging)

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FAQs

Yes. You can also search FDMS86252L on website for other similar products.
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You can order onsemi brand products with FDMS86252L directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel MOSFET, 12 A, 150 V, 8-Pin Power 56 onsemi FDMS86252L. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 12 A, 150 V, 8-Pin Power 56 onsemi FDMS86252L.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21470369 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21470369.
Yes. We ship FDMS86252L Internationally to many countries around the world.