Forward Voltage Vf:
1.4V
Width:
4.7 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
45nC
Package Type:
TO-220
Maximum Continuous Drain Current Id:
8A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
1.4Ω
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
900V
Channel Type:
Type N
Length:
10.1mm
Standards/Approvals:
No
Pin Count:
3
Mount Type:
Through Hole
Maximum Power Dissipation Pd:
205W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
30 V
Series:
QFET
Height:
9.4mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
1.4Ohm @ 4A, 10V
edacadModel:
FQP9N90C Models
Gate Charge (Qg) (Max) @ Vgs:
58 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/1057081
Package:
Tube
Drain to Source Voltage (Vdss):
900 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
205W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2730 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQP9
ECCN:
EAR99
