Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
3.5 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
500 mW
Maximum Gate Source Voltage:
+8 V
Height:
0.94mm
Width:
1.4mm
Length:
2.92mm
Minimum Gate Threshold Voltage:
0.5V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.3 A
Transistor Material:
Si
Maximum Drain Source Resistance:
160 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
160mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
5 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
NDS331N Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.7V, 4.5V
edacadModelUrl:
/en/models/458896
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
500mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
162 pF @ 10 V
standardLeadTime:
34 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3
Current - Continuous Drain (Id) @ 25°C:
1.3A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NDS331
ECCN:
EAR99
This is N-Channel MOSFET 1.3 A 20 V 3-Pin SOT-23 manufactured by onsemi. The manufacturer part number is NDS331N. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 3.5 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 500 mw maximum power dissipation. It features a maximum gate source voltage of +8 v. In addition, the height is 0.94mm. Furthermore, the product is 1.4mm wide. Its accurate length is 2.92mm. Whereas its minimum gate threshold voltage includes 0.5v. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 1.3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 160 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. It has a maximum Rds On and voltage of 160mohm @ 1.5a, 4.5v. The maximum gate charge and given voltages include 5 nc @ 4.5 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.7v, 4.5v. It is shipped in tape & reel (tr) package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 500mw (ta). The product's input capacitance at maximum includes 162 pf @ 10 v. It has a long 34 weeks standard lead time. sot-23-3 is the supplier device package value. The continuous current drain at 25°C is 1.3a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to nds331, a base product number of the product. The product is designated with the ear99 code number.
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