Maximum Drain Source Voltage:
250 V
Typical Gate Charge @ Vgs:
47 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
307 W
Series:
UniFET
Maximum Drain Source Resistance:
69 mΩ
Height:
4.83mm
Width:
11.33mm
Length:
10.67mm
Minimum Gate Threshold Voltage:
3V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
44 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
69mOhm @ 22A, 10V
Gate Charge (Qg) (Max) @ Vgs:
61 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
FDB44N25TM Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/1305745
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
250 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
307W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2870 pF @ 25 V
standardLeadTime:
9 Weeks
Mounting Type:
Surface Mount
Series:
UniFET™
Supplier Device Package:
TO-263 (D2PAK)
Current - Continuous Drain (Id) @ 25°C:
44A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDB44N25
ECCN:
EAR99
This is N-Channel MOSFET 44 A 250 V 3-Pin D2PAK manufactured by onsemi. The manufacturer part number is FDB44N25TM. It has a maximum of 250 v drain source voltage. With a typical gate charge at Vgs includes 47 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 307 w maximum power dissipation. The product unifet, is a highly preferred choice for users. It provides up to 69 mω maximum drain source resistance. In addition, the height is 4.83mm. Furthermore, the product is 11.33mm wide. Its accurate length is 10.67mm. Whereas its minimum gate threshold voltage includes 3v. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 44 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 69mohm @ 22a, 10v. The maximum gate charge and given voltages include 61 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 250 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 307w (tc). The product's input capacitance at maximum includes 2870 pf @ 25 v. It has a long 9 weeks standard lead time. The product unifet™, is a highly preferred choice for users. to-263 (d2pak) is the supplier device package value. The continuous current drain at 25°C is 44a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdb44n25, a base product number of the product. The product is designated with the ear99 code number.
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