Maximum Drain Source Voltage:
100 V
Typical Gate Charge @ Vgs:
2 nC @ 4.5 V, 4 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
19 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.75mm
Width:
3.3mm
Length:
3.3mm
Minimum Gate Threshold Voltage:
1V
Package Type:
Power 33
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
7.5 A
Transistor Material:
Si
Maximum Drain Source Resistance:
178 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
103mOhm @ 3.3A, 10V
title:
FDMC86116LZ
Vgs(th) (Max) @ Id:
2.2V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.3W (Ta), 19W (Tc)
standardLeadTime:
20 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
310 pF @ 50 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Gate Charge (Qg) (Max) @ Vgs:
6 nC @ 10 V
Supplier Device Package:
8-MLP (3.3x3.3)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
3.3A (Ta), 7.5A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMC86116
ECCN:
EAR99
